品名９�span style="word-break: break-all; background: rgb(250, 250, 250);">TaNiS5 晶体

制造方法：

化学气相沉积法， Chemical Vapor Deposition （CVD（�/span>

产品简介：

晶体大小	3-10nm
晶体种类	Magnetic semiconductor
纯度	>99.999%
表征方法	EDS，SEM，Raman
晶体生长方式	CVD化学气相传输泔�/span>

应用领域９�/span>

光电器件，微电子器件，生物传感，化学传感等领域、�/span>

参考文�?/span>
1�?nbsp;Sunshine, Steven A., and James A. Ibers. "Structure and physical properties of the new layered ternary chalcogenides tantalum nickel sulfide (Ta2NiS5) and tantalum nickel selenide (Ta2NiSe5)." Inorganic Chemistry 24.22 (1985): 3611-3614.
2，Di Salvo, F. J., et al. "Physical and structural properties of the new layered compounds Ta2NiS5 and Ta2NiSe5." Journal of the Less Common Metals 116.1 (1986): 51-61.
3�?nbsp;Larkin, T. I., et al. "Infrared phonon spectra of quasi-one-dimensional Ta 2 NiSe 5 and Ta 2 NiS 5." Physical Review B 98.12 (2018): 125113.
4�?nbsp;Yan, Bingzheng, et al. "Ternary chalcogenide Ta 2 NiS 5 as a saturable absorber for a 1.9 μm passively Q-switched bulk laser." Optics letters44.2 (2019): 451-454.

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