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| 眉山天乐半导?英寸SiC晶体产品标准 6-inch SiC Ingot Specification |
|||||
| 序号 Item |
等级 Grade |
精选级（Z级） Zero MPD Grade |
工业级（P级） Production Grade |
测试级（D级） Dummy Grade |
|
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype |
4H-N | |||
| 1.2 | 表面晶向偏离?br style="box-sizing: border-box;"/>Surface orientation error | Off axis?.0°toward<11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剁br style="box-sizing: border-box;"/>Dopant | Nitrogen | |||
| 2.2 | 电阻玆br style="box-sizing: border-box;"/>Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter |
149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness |
?5mm | |||
| 3.3 | 主定位边方向 Primary Flat Orientation |
{10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | Ingot flat length | 47.5mm±2.0mm | ||
| Seed flat length | None | ||||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density |
?.1cm-2 | ?.2cm-2 | ?5cm-2 | |
| 4.2 | 螺位锘br style="box-sizing: border-box;"/>TSD | ?00cm-2 | ?00cm-2 | ?000cm-2 | |
| 4.3 | 基平面位锘br style="box-sizing: border-box;"/>BPD | ?00cm-2 | ?00cm-2 | / | |
| 4.4 | 刃位锘br style="box-sizing: border-box;"/>TED | ?000cm-2 | ?000cm-2 | / | |
| 5.晶体质量 Ingot Quality | |||||
| 5.1 | 六方空洞 Hex plate |
None | Cumulative area ?.1% | ||
| 5.2 | 划痕 Scratches |
None | Cumulative length ?x wafer diameter | ||
| 5.3 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | ?.2 mm | ? ?mm width and depth | |
| 5.4 | 目测包裹?br style="box-sizing: border-box;"/>Visual carbon inclusion | None | Cumulative area ?.05% | Cumulative area ?% | |
| 5.5 | 多型 Polytype areas |
None | None | Cumulative area ?% | |
| 6.边缘轮廓 Edge | |||||
| 6.1 | 边缘裂纹 Edge Cracks |
None | None | Cumulative length ?0mm, single length ? mm |
|
| 7.包装 Packaging | |||||
| 7.1 | 晶锭标记 Ingot Marking(carbon side) |
Carbon face label | |||
| 7.2 | 包装 Packaging |
单晶锭包裄br style="box-sizing: border-box;"/>Single Ingot Package | |||
| Notes: None means no request. | |||||
| 眉山天乐半导?英寸SiC晶体产品标准 6-inch SiC Ingot Specification |
|||||
| 序号 Item |
等级 Grade |
精选级（Z级） Zero MPD Grade |
工业级（P级） Production Grade |
测试级（D级） Dummy Grade |
|
| 1.晶体参数 Boule Parameters | |||||
| 1.1 | 晶型 Polytype |
4H-N | |||
| 1.2 | 表面晶向偏离?br style="box-sizing: border-box;"/>Surface orientation error | Off axis?.0°toward <11-20>±0.5°，On axis:<0001>±0.5° | |||
| 2.电学参数 Electrical Parameters | |||||
| 2.1 | 掺杂剁br style="box-sizing: border-box;"/>Dopant | Nitrogen | |||
| 2.2 | 电阻玆br style="box-sizing: border-box;"/>Resistivity | 0.015-0.028Ω·cm | |||
| 3.机械参数 Mechanical Parameters | |||||
| 3.1 | 直径 Diameter |
149.5mm-150.0mm | |||
| 3.2 | 厚度 Thickness |
?5mm | |||
| 3.3 | 主定位边方向 Primary Flat Orientation |
{10-10}±5° | |||
| 3.4 | 主定位边长度 Primary Flat Length | Ingot flat length | 47.5mm±2.0mm | ||
| Seed flat length | None | ||||
| 4.结构 Structure | |||||
| 4.1 | 微管密度 Micropipe density |
?.1cm-2 | ?.2cm-2 | ?5cm-2 | |
| 4.2 | 螺位锘br style="box-sizing: border-box;"/>TSD | ?00cm-2 | ?00cm-2 | ?000cm-2 | |
| 4.3 | 基平面位锘br style="box-sizing: border-box;"/>BPD | ?00cm-2 | ?00cm-2 | / | |
| 4.4 | 刃位锘br style="box-sizing: border-box;"/>TED | ?000cm-2 | ?000cm-2 | / | |
| 5.晶体质量 Ingot Quality | |||||
| 5.1 | 六方空洞 Hex plate |
None | Cumulative area ?.1% | ||
| 5.2 | 划痕 Scratches |
None | Cumulative length ?x wafer diameter | ||
| 5.3 | 缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination | None | ?.2 mm | ? ?mm width and depth | |
| 5.4 | 目测包裹?br style="box-sizing: border-box;"/>Visual carbon inclusion | None | Cumulative area ?.05% | Cumulative area ?% | |
| 5.5 | 多型 Polytype areas |
None | None | Cumulative area ?% | |
| 6.边缘轮廓 Edge | |||||
| 6.1 | 边缘裂纹 Edge Cracks |
None | None | Cumulative length ?0mm, single length ? mm |
|
| 7.包装 Packaging | |||||
| 7.1 | 晶锭标记 Ingot Marking(carbon side) |
Carbon face label | |||
| 7.2 | 包装 Packaging |
单晶锭包裄br style="box-sizing: border-box;"/>Single Ingot Package | |||
| Notes: None means no request. | |||||
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