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中电化合物半导体有限公司
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证：工商信息已核宝br /> 访问量：1219
产品简今/div>
Standard Layer Specifications
Electrical Specifications
Layer name |
Discription |
Thickness |
Comment |
Substrate |
100 or150 mm |
500±25 μm |
Beveling or Flat Orientation |
Buffer |
Doping iron |
2±0.5 μm |
Can be customized |
GaN channel |
GaN |
200nm |
Can be customized |
AlN insert |
AlN |
0.5-1.5nm |
Can be customized |
Barrier |
AlGaN(25%Al) |
20nm |
Can be customized |
Cap |
GaN |
2nm |
SiN cap available upon request |
Parameter |
Measurement |
Units |
Target |
Electron Mobility |
Hall |
cm2/V.s |
>1600 |
Sheet charge Density |
Hall |
/cm2 |
>8E12 |
Sheet Resistivity |
Eddy current |
Ohms/sq |
<450 |
Sheet Resistivity uniformity |
Eddy current |
55 point |
<3% |
surface Topography |
AFM |
nm@5*5µm2 |
<0.5 |
TTV |
um |
<5 |
|
Bow |
um |
< 5 0 |
|
Breakdown voltage |
Gate test |
V |
>120 |
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