博雅新材6英寸SiC晶体-参数-价格-中国粉体罐�/title>

眉山天乐半导�?英寸SiC晶体产品标准 6-inch SiC Ingot Specification
序号 Item	等级 Grade		精选级（Z级） Zero MPD Grade	工业级（P级） Production Grade	测试级（D级） Dummy Grade
1.晶体参数 Boule Parameters
1.1	晶型 Polytype		4H-N
1.2	表面晶向偏离�?br style="box-sizing: border-box;"/>Surface orientation error		Off axis�?.0°toward<11-20>±0.5°，On axis:<0001>±0.5°
2.电学参数 Electrical Parameters
2.1	掺杂剁�br style="box-sizing: border-box;"/>Dopant		Nitrogen
2.2	电阻玆�br style="box-sizing: border-box;"/>Resistivity		0.015-0.028Ω·cm
3.机械参数 Mechanical Parameters
3.1	直径 Diameter		149.5mm-150.0mm
3.2	厚度 Thickness		�?5mm
3.3	主定位边方向 Primary Flat Orientation		{10-10}±5°
3.4	主定位边长度 Primary Flat Length	Ingot flat length	47.5mm±2.0mm
		Seed flat length	None
4.结构 Structure
4.1	微管密度 Micropipe density		�?.1cm-2	�?.2cm-2	�?5cm-2
4.2	螺位锘�br style="box-sizing: border-box;"/>TSD		�?00cm-2	�?00cm-2	�?000cm-2
4.3	基平面位锘�br style="box-sizing: border-box;"/>BPD		�?00cm-2	�?00cm-2	/
4.4	刃位锘�br style="box-sizing: border-box;"/>TED		�?000cm-2	�?000cm-2	/
5.晶体质量 Ingot Quality
5.1	六方空洞 Hex plate		None		Cumulative area �?.1%
5.2	划痕 Scratches		None		Cumulative length �?x wafer diameter
5.3	缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination		None	�?.2 mm	�?� �?mm width and depth
5.4	目测包裹�?br style="box-sizing: border-box;"/>Visual carbon inclusion		None	Cumulative area �?.05%	Cumulative area �?%
5.5	多型 Polytype areas		None	None	Cumulative area �?%
6.边缘轮廓 Edge
6.1	边缘裂纹 Edge Cracks		None	None	Cumulative length �?0mm, single length �? mm
7.包装 Packaging
7.1	晶锭标记 Ingot Marking(carbon side)		Carbon face label
7.2	包装 Packaging		单晶锭包裄�br style="box-sizing: border-box;"/>Single Ingot Package
Notes: None means no request.

眉山天乐半导�?英寸SiC晶体产品标准 6-inch SiC Ingot Specification
序号 Item	等级 Grade		精选级（Z级） Zero MPD Grade	工业级（P级） Production Grade	测试级（D级） Dummy Grade
1.晶体参数 Boule Parameters
1.1	晶型 Polytype		4H-N
1.2	表面晶向偏离�?br style="box-sizing: border-box;"/>Surface orientation error		Off axis�?.0°toward <11-20>±0.5°，On axis:<0001>±0.5°
2.电学参数 Electrical Parameters
2.1	掺杂剁�br style="box-sizing: border-box;"/>Dopant		Nitrogen
2.2	电阻玆�br style="box-sizing: border-box;"/>Resistivity		0.015-0.028Ω·cm
3.机械参数 Mechanical Parameters
3.1	直径 Diameter		149.5mm-150.0mm
3.2	厚度 Thickness		�?5mm
3.3	主定位边方向 Primary Flat Orientation		{10-10}±5°
3.4	主定位边长度 Primary Flat Length	Ingot flat length	47.5mm±2.0mm
		Seed flat length	None
4.结构 Structure
4.1	微管密度 Micropipe density		�?.1cm-2	�?.2cm-2	�?5cm-2
4.2	螺位锘�br style="box-sizing: border-box;"/>TSD		�?00cm-2	�?00cm-2	�?000cm-2
4.3	基平面位锘�br style="box-sizing: border-box;"/>BPD		�?00cm-2	�?00cm-2	/
4.4	刃位锘�br style="box-sizing: border-box;"/>TED		�?000cm-2	�?000cm-2	/
5.晶体质量 Ingot Quality
5.1	六方空洞 Hex plate		None		Cumulative area �?.1%
5.2	划痕 Scratches		None		Cumulative length �?x wafer diameter
5.3	缺口/崩边/裂纹/疵点/沾污 Edge chips/indents/cracks/stains/contamination		None	�?.2 mm	�?� �?mm width and depth
5.4	目测包裹�?br style="box-sizing: border-box;"/>Visual carbon inclusion		None	Cumulative area �?.05%	Cumulative area �?%
5.5	多型 Polytype areas		None	None	Cumulative area �?%
6.边缘轮廓 Edge
6.1	边缘裂纹 Edge Cracks		None	None	Cumulative length �?0mm, single length �? mm
7.包装 Packaging
7.1	晶锭标记 Ingot Marking(carbon side)		Carbon face label
7.2	包装 Packaging		单晶锭包裄�br style="box-sizing: border-box;"/>Single Ingot Package
Notes: None means no request.