产品特点/Product characteristics９�/span>

� 提供两种工艺匄�/p>

Two process packages are provided

①外形包:产出6英寸碳化�?SiC) 单晶，外形不开裁�/p>

Shape package: 6-inch silicon carbide (SiC) single crystal is produced without cracking

②工艺包:晶型: 4H

Process package: Crystal form: 4H

电阻玆�0.015~0.025ohm.cm

Resistivity: 0.015 ~ 0.025 ohm . cm

直径:150.25�?.25mm

Diameter: 150.25�?.25 mm

厚度:�?0 (Figure 2) mm

Thickness:�?0 (Figure 2) mm

微管密度:�?ea/cm²

Microtubule density:�? ea/cm²

TSD:�?000ea/cm²

� 温度**可达2400°C

Temperatures up to 2400°C