产品概述/Product Introduction９�/span>

� PECVD主要应用于氧化硅(SiO�? 和氮化硅(SiN4) 材料的薄膜生长，工作原理是在低压引入高频射频电源，采取电容耦合方式使工艺气体电离放电，形成等离子体状态，产生大量的活性基团，这些活性基团在衬底材料表面发生化学反应并沉积到衬底表面，生长出氧化�?SiO�? 或氮化硅(SiN4) 薄膜

PECVD is mainly used for thin film growth of silicon oxide (SiO�? and silicon nitride (SiN4) materials, The working principle is to introduce a high-frequency RF power supply at low voltage, ionize and discharge the process gas by capacitive coupling, and form a plasma state, which produces a large number of active groups. These active groups react chemically on the surface of the substrate material and depos- it on the bottom surface of the village, and grow silicon oxide (SiO�? or silicon nitride (SiN4) thin films.

产品特点/Product Characteristics９�/span>

� 成膜质量髗�/p>

High film quality

� 体积小占地面积小，操作简侾�/p>

Small volume, small floor area and simple operation

� 具有良好的工艺性能，使用范围广泚�/p>

Has good process performance and wide application range