suns-Voc测试�?/p>

如何利用Suns-Voc进行浆料与烧结技术优匕�/p>

少子寿命，PN结的好坏，表面及体内的复合情况，材料质量、钝化效果等" b3 X _6 K$ b1 u" ~- I. E1 V; A

Life time，Pseudo-EFF� Pseudo-Voc� Pseudo-FF� Ideality factor

对比该曲线与*后测定的I臲�/span>V曲线，可以准确测量出电池的串联电阻、�/span>

Suns-Voc系统特征

��晶元测定的温控为25��C

��电压探针的高精准�?/span>

��兼容磁性探钇�/span>

��配备全套浓度补正滤色片的疝气�?/span>

��后支柱可调节高度，准确调节亮�?/span>

��适用标准I臲�/span>V曲线图及Suns-Voc曲线国�/span>

��不受串联电阻的影响，测定晶片特征

Suns-Voc Applications

By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present)� the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage� so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel